Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 4.7 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Good-Ark Electronics | 功能相似 |
硅外延平面的Z-二极管 Silicon Epitaxial Planar Z-Diodes
|
|||
|
|
先科ST | 功能相似 | DO-35 |
硅外延平面的Z-二极管 Silicon Epitaxial Planar Z-Diodes
|
||
|
|
ON Semiconductor | 功能相似 | DO-35 |
硅外延平面的Z-二极管 Silicon Epitaxial Planar Z-Diodes
|
||
BZX55C4V7
|
Fairchild | 功能相似 | DO-35-2 |
硅外延平面的Z-二极管 Silicon Epitaxial Planar Z-Diodes
|
||
BZX55C4V7
|
DC Components | 功能相似 |
硅外延平面的Z-二极管 Silicon Epitaxial Planar Z-Diodes
|
|||
|
|
Continental Device | 功能相似 |
硅外延平面的Z-二极管 Silicon Epitaxial Planar Z-Diodes
|
|||
BZX55C4V7
|
Yangzhou Yangjie Electronic | 功能相似 |
硅外延平面的Z-二极管 Silicon Epitaxial Planar Z-Diodes
|
|||
BZX55C4V7-TAP
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
500mW,BZX55C 系列,Vishay Semiconductor 小信号齐纳二极管 超剧烈反向特性 低反向电流电平 非常高的稳定性 低噪声 符合 AEC-Q101 ### 齐纳二极管,Vishay Semiconductor
|
||
BZX55C4V7RL
|
TAK Cheong | 功能相似 | DO-35 |
DO-35 4.7V 0.5W(1/2W)
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review