Technical parameters/output current: ≤10.0 A
Technical parameters/dissipated power: 42000 mW
Technical parameters/isolation voltage: 2500 Vrms
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/operating temperature (Max): 100 ℃
Technical parameters/operating temperature (Min): -20 ℃
Technical parameters/dissipated power (Max): 42000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: PowerDIP-32
External dimensions/height: 7.2 mm
External dimensions/packaging: PowerDIP-32
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 |
IGBT Transistors 600V 10A SPIM
|
|||
FSAM10SH60
|
ON Semiconductor | 类似代替 | SPM32-AA |
智能功率模块( SPM ) Smart Power Module (SPM)
|
||
FSAM10SH60
|
Fairchild | 类似代替 | PowerDIP-32 |
智能功率模块( SPM ) Smart Power Module (SPM)
|
||
FSAM10SH60A
|
Fairchild | 类似代替 | SPM32-AA |
智能功率模块
|
||
FSAM10SH60A
|
ON Semiconductor | 类似代替 | SPM32-AA |
智能功率模块
|
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