Technical parameters/breakdown voltage: 12.0 V
Technical parameters/forward voltage: 1.2V @200mA
Technical parameters/dissipated power: 800 mW
Technical parameters/voltage regulation value: 12 V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZD27C12P-HE3-08
|
Vishay Semiconductor | 完全替代 | DO-219AB-2 |
稳压二极管 ZENER DIODE SMF DO219-HE3
|
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