Technical parameters/dissipated power: 800 mW
Technical parameters/test current: 100 mA
Technical parameters/voltage regulation value: 8.2 V
Technical parameters/regulated current: 5-100mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB
External dimensions/packaging: DO-219AB
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZD27C8V2P-HE3-08
|
Vishay Semiconductor | 类似代替 | DO-219AB |
Diode Zener Single 8.2V 800mW 2Pin DO-219AB T/R
|
||
BZD27C8V2P-HE3-08
|
VISHAY | 类似代替 | DO-219AB |
Diode Zener Single 8.2V 800mW 2Pin DO-219AB T/R
|
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