Technical parameters/dissipated power: 300W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Input capacitance (Ciss): 10220pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK964R2-55B,118
|
NXP | 功能相似 | TO-263-3 |
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0031 ohm, 10 V, 1.5 V
|
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