Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7 mΩ
Technical parameters/dissipated power: 272 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55 V
Technical parameters/rise time: 115 ns
Technical parameters/Input capacitance (Ciss): 4500pF @25V(Vds)
Technical parameters/rated power (Max): 272 W
Technical parameters/descent time: 111 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 272W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-5
External dimensions/length: 10.3 mm
External dimensions/width: 9.4 mm
External dimensions/height: 4.5 mm
External dimensions/packaging: TO-263-5
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7107-55AIE
|
Philips | 功能相似 |
Power Field-Effect Transistor
|
|||
BUK7107-55AIE,118
|
Nexperia | 类似代替 | TO-263-5 |
Trans MOSFET N-CH 55V 140A 5Pin(4+Tab) D2PAK T/R
|
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