Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 W
Technical parameters/collector breakdown voltage: 5.00 V
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 300 @5A, 10V
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUB941T
|
ST Microelectronics | 功能相似 | D2PAK |
15A, 400V, NPN, Si, POWER TRANSISTOR, TO-263, TO-263, 3 PIN
|
||
BUB941ZTT4
|
ST Microelectronics | 完全替代 | TO-263-3 |
单晶体管 双极, NPN, 350 V, 150 W, 15 A, 300 hFE
|
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