Technical parameters/rise/fall time: 20 ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 6 A
Technical parameters/dissipated power: 33.3 W
Technical parameters/rise time: 20 ns
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/power supply voltage: 4.5V ~ 16V
Technical parameters/power supply voltage (Max): 16 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.98 mm
External dimensions/width: 3.99 mm
External dimensions/height: 1.47 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL89160FBEBZ
|
Intersil | 类似代替 | SOIC-8 |
6A,4.5~16V,高速2通道MOSFET驱动器
|
||
ISL89160FRTAZ
|
Intersil | 类似代替 | TDFN-8 |
6A,4.5~16V,高速2通道MOSFET驱动器
|
||
ISL89160FRTAZ
|
Renesas Electronics | 类似代替 | WDFN-8 |
6A,4.5~16V,高速2通道MOSFET驱动器
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review