Technical parameters/rise/fall time: 7.5ns, 10ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 570 mW
Technical parameters/descent time (Max): 20 ns
Technical parameters/rise time (Max): 20 ns
Technical parameters/dissipated power (Max): 570 mW
Technical parameters/power supply voltage: 4.5V ~ 18V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL89412IP
|
Renesas Electronics | 类似代替 | DIP-8 |
高速,双通道功率MOSFET驱动器 High Speed, Dual Channel Power MOSFET Drivers
|
||
ISL89412IPZ
|
Intersil | 类似代替 | PDIP-8 |
高速,双通道功率MOSFET驱动器 High Speed, Dual Channel Power MOSFET Drivers
|
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