Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.33 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 32 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 550 V
Technical parameters/rise time: 16 ns
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPA12N50C3XKSA1
|
Infineon | 功能相似 | TO-220-3 |
Infineon CoolMOS C3 系列 Si N沟道 MOSFET SPA12N50C3XKSA1, 11.6 A, Vds=560 V, 3引脚 TO-220FP封装
|
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