Technical parameters/drain source voltage (Vds): 700 V
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 1100pF @25V(Vds)
Technical parameters/rated power (Max): 142 W
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 142000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP9NK70Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP9NK70Z 功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
|
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