Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1.25 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP28
|
Siemens Semiconductor | 类似代替 | SOT-223 |
PNP硅达林顿晶体管 PNP Silicon Darlington Transistors
|
||
BCP28
|
Infineon | 类似代替 | SOT-223 |
PNP硅达林顿晶体管 PNP Silicon Darlington Transistors
|
||
|
|
Philips | 类似代替 | SOT-223 |
复合晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BSP62
|
NXP | 类似代替 | SOT-223 |
复合晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BSP62
|
Nexperia | 类似代替 | SOT-223 |
复合晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BSP62,115
|
Nexperia | 功能相似 | TO-261-4 |
Nexperia BSP62,115 PNP 达林顿晶体管对, -1 A, Vce=80 V, HFE=1000, 3 + Tab引脚 SOT-223封装
|
||
BSP62,115
|
NXP | 功能相似 | TO-261-4 |
Nexperia BSP62,115 PNP 达林顿晶体管对, -1 A, Vce=80 V, HFE=1000, 3 + Tab引脚 SOT-223封装
|
||
PZTA64
|
Philips | 功能相似 |
Darlington PNP 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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