Technical parameters/rated voltage (DC): 250 V
Technical parameters/rated current: 16.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 270 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 139 W
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 15.6 A
Technical parameters/rise time: 130 ns
Technical parameters/Input capacitance (Ciss): 1080pF @25V(Vds)
Technical parameters/rated power (Max): 139 W
Technical parameters/descent time: 105 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 139W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP60NF06
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP60NF06 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 10 V, 2 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review