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Description QFET® P Channel MOSFET, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.2  yuan 2.2yuan
5+:
$ 2.9633
25+:
$ 2.7438
50+:
$ 2.5901
100+:
$ 2.5243
500+:
$ 2.4804
2500+:
$ 2.4255
5000+:
$ 2.4035
10000+:
$ 2.3706
Quantity
5+
25+
50+
100+
500+
Price
$2.9633
$2.7438
$2.5901
$2.5243
$2.4804
Price $ 2.9633 $ 2.7438 $ 2.5901 $ 2.5243 $ 2.4804
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2366) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): -200 V

Technical parameters/rated current: -3.70 A

Technical parameters/drain source resistance: 1.40 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 3.70 A

Technical parameters/rise time: 70 ns

Technical parameters/Input capacitance (Ciss): 430pF @25V(Vds)

Technical parameters/rated power (Max): 2.5 W

Technical parameters/descent time: 25 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta), 45W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/length: 6.8 mm

External dimensions/width: 2.5 mm

External dimensions/height: 7.57 mm

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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