Technical parameters/forward voltage: 1.3 V
Technical parameters/reverse recovery time: 250 ns
Technical parameters/Maximum reverse voltage (Vrrm): 600V
Technical parameters/forward current: 1 A
Technical parameters/maximum reverse leakage current (Ir): 5uA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-41
External dimensions/packaging: DO-41
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Toshiba | 功能相似 | DO-41 |
Diode Standard Recovery Rectifier 600V 1A 2Pin DO-41 T/R
|
||
1N4005
|
DC Components | 功能相似 | Ammo Pack |
Diode Standard Recovery Rectifier 600V 1A 2Pin DO-41 T/R
|
||
1N4005
|
Microsemi | 功能相似 | DO-41 |
Diode Standard Recovery Rectifier 600V 1A 2Pin DO-41 T/R
|
||
1N4005
|
LiteOn | 功能相似 | DO-41 |
Diode Standard Recovery Rectifier 600V 1A 2Pin DO-41 T/R
|
||
1N4005
|
Gulfsemi | 功能相似 | DO-41 |
Diode Standard Recovery Rectifier 600V 1A 2Pin DO-41 T/R
|
||
NTE116
|
NTE Electronics | 功能相似 | DO-204AL |
NTE ELECTRONICS NTE116 标准功率二极管, 单, 600 V, 1 A, 1.1 V, 30 A
|
||
|
|
UTC | 功能相似 | DO-41 |
TAIWAN SEMICONDUCTOR SF18G 快速/超快功率二极管, 单, 600 V, 1 A, 1.7 V, 35 ns, 30 A
|
||
|
|
Master Instrument | 功能相似 |
TAIWAN SEMICONDUCTOR SF18G 快速/超快功率二极管, 单, 600 V, 1 A, 1.7 V, 35 ns, 30 A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review