Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 430pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 45 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.8 mm
External dimensions/width: 2.5 mm
External dimensions/height: 7.57 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQU5P20
|
Fairchild | 功能相似 | IPAK |
200V P沟道MOSFET 200V P-Channel MOSFET
|
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