Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 1.70 A
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 275 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 2 V
Technical parameters/input capacitance: 220 pF
Technical parameters/gate charge: 4.60 nC
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 1.70 A, 1.70 mA
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 290pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.56 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT7N10LTF_NL
|
Fairchild | 功能相似 | SOT-223 |
SOT-223 N-CH 100V 1.7A
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||
PHT6NQ10T
|
NXP | 功能相似 | SOT-223 |
NXP PHT6NQ10T 晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
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