Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 2.20 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.13 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 2.20 A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 500pF @25V(Vds)
Technical parameters/rated power (Max): 3.13 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 3.13W (Ta), 85W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.29 mm
External dimensions/width: 4.83 mm
External dimensions/height: 7.88 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQI2N90
|
Fairchild | 功能相似 | TO-262 |
900V N沟道MOSFET 900V N-Channel MOSFET
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Vishay Semiconductor | 功能相似 | TO-262 |
MOSFET N-CH 900V 1.7A TO-262
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Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-262
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LiteOn | 功能相似 | I2PAK-3 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-262
|
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IRFBF20LPBF
|
Vishay Semiconductor | 功能相似 | TO-262 |
Trans MOSFET N-CH 900V 1.7A 3Pin(3+Tab) TO-262
|
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