Technical parameters/drain source voltage (Vds): 700 V
Technical parameters/dissipated power (Max): 28 W
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Catalog: MOS(Field Effect Transistor
Other/continuous drain current (Id) (at 25 ° C): 2A
Other/leakage source voltage (Vdss): 700V
Other/gate source threshold voltage (maximum value): 5V@250uA
Other/Type: N-Channel
Other/leakage source conduction resistance (maximum value): 6.3Ω@1A,10V
Other/power dissipation (maximum value): 28W
Other/Product Code: C2695
Other/Gross weight of goods: 0.000100kg
Other/Packaging Specifications: TO-220F(TO-220IS...
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