Technical parameters/rated voltage (DC): -250 V
Technical parameters/rated current: -6.00 A
Technical parameters/drain source resistance: 1.10 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 90 W
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/rise time: 75 ns
Technical parameters/Input capacitance (Ciss): 780pF @25V(Vds)
Technical parameters/rated power (Max): 90 W
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 90W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP07N60C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP07N60C3.. 功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
|
||
SPP07N60S5
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP07N60S5 功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4.5 V
|
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