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Model FQP6N70
Description 700V NChannel MOSFET 700V N-Channel MOSFET
Product QR code
Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
7.29  yuan 7.29yuan
10+:
$ 8.7504
100+:
$ 8.3129
500+:
$ 8.0212
1000+:
$ 8.0066
2000+:
$ 7.9483
5000+:
$ 7.8754
7500+:
$ 7.8170
10000+:
$ 7.7879
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7504
$8.3129
$8.0212
$8.0066
$7.9483
Price $ 8.7504 $ 8.3129 $ 8.0212 $ 8.0066 $ 7.9483
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1553) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 700 V

Technical parameters/rated current: 6.20 A

Technical parameters/drain source resistance: 1.50 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 142 W

Technical parameters/drain source voltage (Vds): 700 V

Technical parameters/leakage source breakdown voltage: 700 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 6.20 A

Technical parameters/rise time: 70 ns

Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)

Technical parameters/rated power (Max): 142 W

Technical parameters/descent time: 50 ns

Technical parameters/dissipated power (Max): 142W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP9NK70Z STP9NK70Z ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP9NK70Z 功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
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