Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 150 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 139 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 19A
Technical parameters/rise time: 150 ns
Technical parameters/Input capacitance (Ciss): 1080pF @25V(Vds)
Technical parameters/descent time: 115 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 139W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP19N20C
|
Fairchild | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP19N20C. 晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
|
||
FQP19N20C
|
ON Semiconductor | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP19N20C. 晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
|
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