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Model FQD4P25TM
Description MOSFET P-CH 250V 3.1A DPAK
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Brand: ON Semiconductor
Packaging TO-252-3
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9809) Minimum order quantity(1)
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Technical parameters/dissipated power: 2.5W (Ta), 45W (Tc)

Technical parameters/drain source voltage (Vds): 250 V

Technical parameters/rise time: 60 ns

Technical parameters/Input capacitance (Ciss): 420pF @25V(Vds)

Technical parameters/descent time: 27 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta), 45W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQD4P25TM_WS FQD4P25TM_WS Fairchild 功能相似 TO-252-3
P-Channel QFET® MOSFET -250V, -3.1A, 2.1Ω
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