Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 7.30 A
Technical parameters/drain source resistance: 275 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.75W (Ta), 40W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 7.30 A
Technical parameters/Input capacitance (Ciss): 290pF @25V(Vds)
Technical parameters/rated power (Max): 3.75 W
Technical parameters/dissipated power (Max): 3.75W (Ta), 40W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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