Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 9.3 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 300 mA
Technical parameters/rise time: 21 ns
Technical parameters/Input capacitance (Ciss): 170pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQN1N60CTA
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR FQN1N60CTA 功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 9.3 ohm, 10 V, 4 V
|
||
FQN1N60CTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR FQN1N60CTA 功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 9.3 ohm, 10 V, 4 V
|
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