Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 50.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 22 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.75 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 50.0 A
Technical parameters/rise time: 105 ns
Technical parameters/Input capacitance (Ciss): 1540pF @25V(Vds)
Technical parameters/rated power (Max): 3.75 W
Technical parameters/descent time: 65 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.75W (Ta), 120W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.29 mm
External dimensions/width: 4.83 mm
External dimensions/height: 7.88 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQI50N06TU
|
Fairchild | 功能相似 | TO-262-3 |
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) I2PAK Rail
|
||
FQI50N06TU
|
ON Semiconductor | 功能相似 | TO-262-3 |
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) I2PAK Rail
|
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