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Model FQA36P15
Description QFET® P Channel MOSFET, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage（
Product QR code
Brand: ON Semiconductor
Packaging TO-3-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
9.25  yuan 9.25yuan
10+:
$ 11.1048
100+:
$ 10.5496
500+:
$ 10.1794
1000+:
$ 10.1609
2000+:
$ 10.0869
5000+:
$ 9.9943
7500+:
$ 9.9203
10000+:
$ 9.8833
Quantity
10+
100+
500+
1000+
2000+
Price
$11.1048
$10.5496
$10.1794
$10.1609
$10.0869
Price $ 11.1048 $ 10.5496 $ 10.1794 $ 10.1609 $ 10.0869
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7229) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.09 Ω

Technical parameters/dissipated power: 294 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 150 V

Technical parameters/rise time: 350 ns

Technical parameters/Input capacitance (Ciss): 2550pF @25V(Vds)

Technical parameters/rated power (Max): 294 W

Technical parameters/descent time: 150 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 294000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 15.8 mm

External dimensions/width: 5 mm

External dimensions/height: 18.9 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Other/Manufacturing Applications: Lighting, motor drive and control, power management, audio

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQA36P15_F109 FQA36P15_F109 Fairchild 类似代替 TO-3-3
MOSFET P-CH 150V 36A TO-3P
PDF
FQA36P15_F109 FQA36P15_F109 ON Semiconductor 类似代替 TO-3-3
MOSFET P-CH 150V 36A TO-3P
PDF

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