Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -5.40 A
Technical parameters/drain source resistance: 450 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 5.40 A
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 295pF @25V(Vds)
Technical parameters/descent time: 25 ns
Technical parameters/dissipated power (Max): 2.5W (Ta), 28W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SFR9024TM
|
Fairchild | 类似代替 | TO-252-3 |
P沟道 60V 7.8A
|
||
|
|
Fairchild | 类似代替 | TO-252-3 |
先进的功率MOSFET Advanced Power MOSFET
|
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