Technical parameters/rated voltage (DC): -200 V
Technical parameters/rated current: -2.40 A
Technical parameters/drain source resistance: 2.70 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5W (Ta), 37W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 2.40 A
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 37W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD3P20TM
|
Fairchild | 类似代替 | TO-252-3 |
MOSFET P-CH 200V 2.4A DPAK
|
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