Technical parameters/rated voltage (DC): 250 V
Technical parameters/rated current: 5.50 A
Technical parameters/drain source resistance: 1.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.13W (Ta), 63W (Tc)
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 5.50 A
Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/rated power (Max): 3.13 W
Technical parameters/dissipated power (Max): 3.13W (Ta), 63W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 250V 3.6A 3Pin(2+Tab) D2PAK T/R
|
||
FQB4N25TM
|
Fairchild | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 250V 3.6A 3Pin(2+Tab) D2PAK T/R
|
||
IRF624S
|
VISHAY | 功能相似 | TO-263 |
MOSFET N-CH 250V 4.4A D2PAK
|
||
IRF624S
|
International Rectifier | 功能相似 |
MOSFET N-CH 250V 4.4A D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review