Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 8.00 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 225 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/leakage source breakdown voltage: 1000 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/rise time: 95 ns
Technical parameters/Input capacitance (Ciss): 3220pF @25V(Vds)
Technical parameters/rated power (Max): 225 W
Technical parameters/descent time: 80 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 15.8 mm
External dimensions/width: 5 mm
External dimensions/height: 18.9 mm
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2613(F)
|
Toshiba | 功能相似 | TO-3-3 |
TO-3PN N-CH 1000V 8A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review