Technical parameters/drain source resistance: 2.30 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 198 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/rise time: 90 ns
Technical parameters/Input capacitance (Ciss): 1770pF @25V(Vds)
Technical parameters/rated power (Max): 198 W
Technical parameters/descent time: 60 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA5N90
|
Freescale | 类似代替 |
900V N沟道MOSFET 900V N-Channel MOSFET
|
|||
FQA5N90
|
ON Semiconductor | 类似代替 | TO-3-3 |
900V N沟道MOSFET 900V N-Channel MOSFET
|
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