Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 200 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/rated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBT3904E6327HTSA1
|
Infineon | 类似代替 | SOT-23-3 |
SMBT3904 系列 NPN 40 V 200 mA 表面贴装 硅 开关 晶体管 - SOT-23-3
|
||
SMBT3904E6433HTMA1
|
Infineon | 类似代替 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Silicon Switch TRANSISTOR
|
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