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Model AFM906NT1
Description Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) Wideband Airfast RF Power LDMOS transistor 136-941 MHz, 6.0 W, 7.5 V
Product QR code
Brand: NXP
Packaging DFN-16
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
10.26  yuan 10.26yuan
5+:
$ 12.0042
50+:
$ 11.4912
200+:
$ 11.2039
500+:
$ 11.1321
1000+:
$ 11.0603
2500+:
$ 10.9782
5000+:
$ 10.9269
7500+:
$ 10.8756
Quantity
5+
50+
200+
500+
1000+
Price
$12.0042
$11.4912
$11.2039
$11.1321
$11.0603
Price $ 12.0042 $ 11.4912 $ 11.2039 $ 11.1321 $ 11.0603
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9742) Minimum order quantity(5)
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Technical parameters/frequency: 136MHz ~ 941MHz

Technical parameters/dissipated power: 65800 mW

Technical parameters/output power: 6 W

Technical parameters/gain: 20.3 dB

Technical parameters/test current: 100 mA

Technical parameters/Input capacitance (Ciss): 68.9pF @7.5V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 65800 mW

Technical parameters/power supply voltage: 7.5 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 16

Encapsulation parameters/Encapsulation: DFN-16

External dimensions/packaging: DFN-16

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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