Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN3302RTA
|
ON Semiconductor | 完全替代 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR FJN3302RTA 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, TO-226AA
|
||
FJNS3202RBU
|
ON Semiconductor | 完全替代 | TO-92 |
Trans Digital BJT NPN 50V 100mA 3Pin TO-92S Bulk
|
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