Technical parameters/frequency: 4 MHz
Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 1.50 A
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 20 W
Technical parameters/leakage source breakdown voltage: 700 V
Technical parameters/Continuous drain current (Ids): 1.50 A
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/minimum current amplification factor (hFE): 8
Technical parameters/rated power (Max): 20 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 20000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8 mm
External dimensions/width: 3.25 mm
External dimensions/height: 11 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 | TO-126-3 |
高压开关模式的应用 High Voltage Switch Mode Applications
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Fairchild | 类似代替 | TO-126-3 |
高压开关模式的应用 High Voltage Switch Mode Applications
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FJE3303TU
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Freescale | 类似代替 |
Trans GP BJT NPN 400V 1.5A 3Pin(3+Tab) TO-126 Rail
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KSE13003ASTU
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Freescale | 类似代替 |
双极晶体管 - 双极结型晶体管(BJT) NPN Si Transistor
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Fairchild | 类似代替 | TO-126-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Si Transistor
|
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