Technical parameters/frequency: 30 MHz
Technical parameters/rated voltage (DC): -140 V
Technical parameters/rated current: -10.0 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 80 W
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 90 @3A, 4V
Technical parameters/Maximum current amplification factor (hFE): 180
Technical parameters/rated power (Max): 80 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 80000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 15.7 mm
External dimensions/width: 5.7 mm
External dimensions/height: 16.7 mm
External dimensions/packaging: TO-3-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
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