Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750
Technical parameters/rated power (Max): 40 W
Technical parameters/DC current gain (hFE): 750
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD678AS
|
ON Semiconductor | 类似代替 | TO-126-3 |
Trans Darlington PNP 60V 4A 14000mW 3Pin(3+Tab) TO-126 Bag
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||
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR TIP32CG 单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
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TIP32CG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR TIP32CG 单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
|
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