Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX51-16
|
Philips | 功能相似 | SOT-89 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
|
||
BCX51-16
|
Multicomp | 功能相似 | SOT-89 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
|
||
BCX51-16
|
NXP | 功能相似 | SOT-89 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
|
||
|
|
Central Semiconductor | 功能相似 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
|
|||
BCX51-16
|
Nexperia | 功能相似 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
|
|||
BCX51-16
|
Kexin | 功能相似 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
|
|||
BCX51-16
|
SHIKUES | 功能相似 | SOT-89 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
|
||
BCX5116E6327HTSA1
|
Infineon | 类似代替 | SOT-89 |
SOT-89 PNP 45V 1A
|
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