Technical parameters/forward voltage: 0.975 V
Technical parameters/reverse recovery time: 35 ns
Technical parameters/Maximum reverse voltage (Vrrm): 200 V
Technical parameters/forward current: 16 A
Technical parameters/maximum reverse leakage current (Ir): 10 uA
Technical parameters/forward voltage (Max): 975mV @16A
Technical parameters/forward current (Max): 16000 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.45 mm
External dimensions/width: 9.14 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FESB16DT-E3/81
|
Vishay Semiconductor | 功能相似 | TO-263-3 |
16A 至 330A,Vishay Semiconductor ### 二极管和整流器,Vishay Semiconductor
|
||
FESB16DTHE3/45
|
VISHAY | 类似代替 | DO-5 |
Diode Switching 200V 16A 3Pin(2+Tab) TO-263AB Tube
|
||
FESB16DTHE3/45
|
Vishay Semiconductor | 类似代替 | TO-263-3 |
Diode Switching 200V 16A 3Pin(2+Tab) TO-263AB Tube
|
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