Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 8.60 A
Technical parameters/drain source resistance: 15 mΩ
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 2.2 V
Technical parameters/input capacitance: 2.09 nF
Technical parameters/gate charge: 18.5 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 8.60 A, 6.30 A
Technical parameters/rise time: 11.0 ns
Technical parameters/Input capacitance (Ciss): 760pF @10V(Vds)
Technical parameters/rated power (Max): 900 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS8DNF3LL
|
ST Microelectronics | 功能相似 | SOIC-8 |
STS8DNF3LL 系列 双 N 沟道 30 V 0.02 Ω 12.5 nC STripFET™ II Mosfet- SOIC-8
|
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