Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 56.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 9.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8 W
Technical parameters/input capacitance: 1.42 nF
Technical parameters/gate charge: 14.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 56.0 A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 1425pF @15V(Vds)
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2.8W (Ta), 60W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Freescale | 类似代替 |
N沟道PowerTrench MOSFET的30V ， 58A ，10M N-Channel PowerTrench MOSFET 30V, 58A, 10m
|
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