Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 21.0 A
Technical parameters/drain source resistance: 3.90 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/input capacitance: 3.88 nF
Technical parameters/gate charge: 58.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 21.0 A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 3880pF @15V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6699S
|
Fairchild | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6699S 晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
|
||
FDS7066N3
|
ON Semiconductor | 类似代替 | SOIC-8 |
30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
|
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