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Model FDPF5N50NZU
Description UniFET™ N Channel MOSFET, Fairchild Semiconductor UniFET ™ MOSFET is Fairchild Semiconductor's high-voltage MOSFET series. It has the smallest on state resistance in planar MOSFETs, as well as excellent switching performance and high avalanche energy intensity. In addition, the internal gate source ESD diode enables UniFET-II ™ MOSFET can withstand surge stress exceeding 2000V HBM. UniFET ™ MOSFET is suitable for switch mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supply, ATX (advanced technology extension), and electronic lamp ballasts. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
5.25  yuan 5.25yuan
10+:
$ 6.3000
100+:
$ 5.9850
500+:
$ 5.7750
1000+:
$ 5.7645
2000+:
$ 5.7225
5000+:
$ 5.6700
7500+:
$ 5.6280
10000+:
$ 5.6070
Quantity
10+
100+
500+
1000+
2000+
Price
$6.3000
$5.9850
$5.7750
$5.7645
$5.7225
Price $ 6.3000 $ 5.9850 $ 5.7750 $ 5.7645 $ 5.7225
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6788) Minimum order quantity(10)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 30 W

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/Continuous drain current (Ids): 3.9A

Technical parameters/Input capacitance (Ciss): 485pF @25V(Vds)

Technical parameters/rated power (Max): 30 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 30W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.16 mm

External dimensions/width: 4.7 mm

External dimensions/height: 15.87 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDPF8N50NZF FDPF8N50NZF Fairchild 功能相似 TO-220-3
ON Semiconductor UniFET 系列 Si N沟道 MOSFET FDPF8N50NZF, 7 A, Vds=500 V, 3引脚 TO-220F封装
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