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Model FDS6299S
Description MOSFET N-CH 30V 21A 8SOIC
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Brand: ON Semiconductor
Packaging SOIC-8
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8437) Minimum order quantity(1)
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Technical parameters/dissipated power: 3W (Ta)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/rise time: 12 ns

Technical parameters/Input capacitance (Ciss): 3880pF @15V(Vds)

Technical parameters/descent time: 35 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS6699S FDS6699S Fairchild 类似代替 SOIC-8
FAIRCHILD SEMICONDUCTOR FDS6699S 晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
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FDS7066N3 FDS7066N3 ON Semiconductor 类似代替 SOIC-8
30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
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