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Model FDP16AN08A0
Description PowerTrench® N Channel MOSFET, up to 9.9A, Fairchild Semiconductor # # MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
6.42  yuan 6.42yuan
10+:
$ 7.7004
100+:
$ 7.3154
500+:
$ 7.0587
1000+:
$ 7.0459
2000+:
$ 6.9945
5000+:
$ 6.9304
7500+:
$ 6.8790
10000+:
$ 6.8534
Quantity
10+
100+
500+
1000+
2000+
Price
$7.7004
$7.3154
$7.0587
$7.0459
$6.9945
Price $ 7.7004 $ 7.3154 $ 7.0587 $ 7.0459 $ 6.9945
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8861) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 75.0 V

Technical parameters/rated current: 58.0 A

Technical parameters/drain source resistance: 13.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 135 W

Technical parameters/input capacitance: 1.86 nF

Technical parameters/gate charge: 28.0 nC

Technical parameters/drain source voltage (Vds): 75 V

Technical parameters/leakage source breakdown voltage: 75.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 58.0 A

Technical parameters/rise time: 82 ns

Technical parameters/Input capacitance (Ciss): 1857pF @25V(Vds)

Technical parameters/rated power (Max): 135 W

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 135W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.67 mm

External dimensions/width: 4.83 mm

External dimensions/height: 9.4 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP60NF06 STP60NF06 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP60NF06 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 10 V, 2 V
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