Technical parameters/drain source resistance: 0.005 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 36 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 14.8A
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 2520pF @15V(Vds)
Technical parameters/rated power (Max): 2.3 W
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.3W (Ta), 36W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Power-33-8
External dimensions/length: 3.3 mm
External dimensions/width: 3.3 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: Power-33-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMC7692
|
ON Semiconductor | 功能相似 | PowerWDFN-8 |
PowerTrench® N 通道 MOSFET，10A 至 19.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
FDMC7692S
|
ON Semiconductor | 类似代替 | DFN-33 |
N沟道功率沟槽？ SyncFETTM N-Channel Power Trench? SyncFETTM
|
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