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Model FDMS86520L
Description FDMS86520L Series 60 V 22 A 8.2 mOhm N-channel PowerTrench ® MOSFET - POWER 56
Product QR code
Brand: ON Semiconductor
Packaging QFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.01  yuan 7.01yuan
10+:
$ 8.4096
100+:
$ 7.9891
500+:
$ 7.7088
1000+:
$ 7.6948
2000+:
$ 7.6387
5000+:
$ 7.5686
7500+:
$ 7.5126
10000+:
$ 7.4845
Quantity
10+
100+
500+
1000+
2000+
Price
$8.4096
$7.9891
$7.7088
$7.6948
$7.6387
Price $ 8.4096 $ 7.9891 $ 7.7088 $ 7.6948 $ 7.6387
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1644) Minimum order quantity(10)
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Technical parameters/dissipated power: 2.5 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/rise time: 5.6 ns

Technical parameters/Input capacitance (Ciss): 3470pF @30V(Vds)

Technical parameters/rated power (Max): 2.5 W

Technical parameters/descent time: 3.4 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2500 mW

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: QFN-8

External dimensions/packaging: QFN-8

Physical parameters/materials: Silicon

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSC067N06LS3GATMA1 BSC067N06LS3GATMA1 Infineon 功能相似 PG-TDSON-8
INFINEON BSC067N06LS3GATMA1 晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1.7 V
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