Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0189 Ω
Technical parameters/dissipated power: 2.3 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 2.2 ns
Technical parameters/Input capacitance (Ciss): 999pF @50V(Vds)
Technical parameters/rated power (Max): 2.3 W
Technical parameters/descent time: 2.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 41 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DFN-8
External dimensions/length: 3.3 mm
External dimensions/width: 3.3 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: DFN-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMC86102LZ
|
Fairchild | 功能相似 | Power-33-8 |
FAIRCHILD SEMICONDUCTOR FDMC86102LZ 晶体管, MOSFET, N沟道, 22 A, 100 V, 0.019 ohm, 10 V, 1.6 V
|
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