Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0024 Ω
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 3175pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 65 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Power-56
External dimensions/length: 5 mm
External dimensions/width: 6 mm
External dimensions/height: 1.05 mm
External dimensions/packaging: Power-56
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC030N03LSGATMA1
|
Infineon | 功能相似 | PG-TDSON-8 |
INFINEON BSC030N03LSGATMA1 晶体管, MOSFET, N沟道, 100 A, 30 V, 2.5 mohm, 10 V, 1 V
|
||
FDMS8660S
|
Freescale | 类似代替 |
FAIRCHILD SEMICONDUCTOR FDMS8660S 晶体管, MOSFET, N沟道, 40 A, 30 V, 2.4 mohm, 10 V, 1.5 V
|
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